View F0513005L_1238433.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

01.08.28
Features * Up to 3 Gb/s high speed operation * Positive thermal coefficient of modulation current * Differential ECL compatible interface * -5.2 V single power supply * Up to 50 mA p-p modulation current * Up to 50 mA bias current * Maximum bias current preset control * Low-cost 18-terminal LCC package
F0513005L
3 Gb/s NRZ Data Rate
Laser Diode Driver
Applications * Laser diode driver of an optical transmitter circuit up to 3 Gb/s
Functional Description The F0513005L is a high performance GaAs integrated laser diode driver for use in an optical transmitter circuit up to 3 Gb/s NRZ data rate. The F0513005L typically specifies rise time and fall time of 140 psec (10 % - 90 %). It features single -5.2 V supply operation, 1 to 50 mA presettable bias current and up to 50 mA modulation current while dissipating 650 mW is typical. A choice of three packages are available to match various application requirements: an 18-terminal leadless chip carrier (LCC) called F0513005L, an 18-lead metalbased flat package (MFP) called F0513005M, and a 20-lead plastic-molded QFP package called F0513005S.
3 Gb/s Laser Diode Driver
Absolute Maximum Ratings
F0513005L
Ta = 25 C, unless specified
Parameter Supply Voltage Power Dissipation Input Voltage Output Voltage Modulation Current Control Voltage Maximum Bias Current Setting Voltage APC Voltage Storage Temperature Ambient Operating Temperature Symbol VSS Pdis VIN1, VIN2 VOUT1, VOUT2 VM VB VAPC1,VAPC2 Tstg Ta Value - 7 to 0.5 1 -3 to 0.5 -3 to 0.5 VSS to VSS+1.3 VSS to VSS+1 -3 to 0.5 -55 to +125 -0 to +70 Units V W V V V V V C C
Recommended Operating Conditions Ta = 25 C, VSS = - 5.2 V, unless specified
Value Parameter Supply Voltage Output Voltage Ambient Operating Temperature Symbol Min. VSS VOUT1, VOUT2 Ta -5.5 -2.0 0 Typ. -5.2 -1.0 25 Max. -5.0 0 70 V V C Units
3 Gb/s Laser Diode Driver
Electrical Characteristics
F0513005L
Ta = 25 C, VSS = - 5.2 V, unless specified
Value Parameter Circuit Current (1) Input Voltage Input Current Symbol ISS VIH VIL IIN1,IIN2 IMMAX Modulation Current IMMIN VIN1,VIN2 =-1.9V VIN1 =-1.7V, VIN2 =-0.9V VAPC1 =-2.5 V, VAPC2 =0V VM =-3.9V, VB =-5.2V VIN1 =-1.7V, VIN2 =-0.9V VAPC1 =-2.5 V, VAPC2 =0V VM =-2.5V, VB =-4.2V IM =25 to 50mA (Ta= 25 C) Ta = 0 to 70 C VIN1 =-0.9V, VIN2 =-1.7V VAPC1 =0V, VAPC2 =-2.5V VM =-5.2V, VB =-4.2V IBMIN Rise Time Fall Time tr tf VIN1 =-0.9V, VIN2 =-1.7V VAPC1 =-2.5V, VAPC2 =-0V VM =-5.2V, VB =-5.2V RL = 25 10% - 90% RL = 25 10% - 90% 1 mA Test Conditions Min. VM =-5.2V, VB=-5.2V Differential Mode -1.9 -150 -1.7 150 V A -0.9 Typ. 75 Max. 110 -0.7 mA V Units
50
-
-
mA
-
-
1
mA
IM Thermal Coefficient(2)
IMTC
0
-
0.6
%/ C
IBMAX Bias Current
50
-
-
mA
-
-
200 200
ps ps
(1) except modulation current (2) IMTC = 100x [ IM (Ta = 70 C) - IM (Ta = 0 C) ] / IM (Ta = 25 C) / 70 NOTES: 1. Modulation circuit on: VIN1 = - 1.7 V, VIN2 = - 0.9 V 2. Modulation circuit off: VIN1 = - 0.9 V, VIN2 = - 1.7 V 3. Bias circuit on: VAPC1 = 0 V, VAPC2 = - 2.5 V 4. Bias circuit off: VAPC1 = - 2.5 V, VAPC2 = 0 V
3 Gb/s Laser Diode Driver
Block Diagram
GND OUT1 OUT2 GND
F0513005L
VIN1 VIN2
+ -
VAPC2 VAPC1
VSS Input Buffer
VM
VSS Switching Section
VB Bias Setting Section Level Shifter
Pin Assignments (Bottom View)
1 2 3 4
12 13 11 14 15 16 18 17
Pin Descriptions
OUT1 NC VAPC1 VB VSS GND VM VAPC2 NC OUT2 NC VIN2 GND NC NC VSS VIN1 GND Output No Connection APC Signal Input Maximum Bias Current (IBMAX)Setting Voltage Supply Voltage Supply Voltage Modulation Current Control Voltage APC Reference Voltage No Connection Output No Connection Differential Mode Input Supply Voltage No Connection No Connection Supply Voltage Differential Mode Input Supply Voltage
5 6 7 8 9 10 11 12 13 14 15
10
1
9 8 7 6 5
2 4 3
No.1 LEAD IDENTIFIER
16 17 18
3 Gb/s Laser Diode Driver
Test Circuits (1) DC Characteristics
F0513005L
OUT1 VIN1
OUT2 VAPC1
VIN2
F0513005L VAPC2
VM GND VSS
VB
4400pF -5.2V (2) AC Characteristics
50 Sampling Oscilloscope OUT1 Pulse Pattern Generrator VIN1
25
OUT2 VAPC1
VIN2
F0513005L VAPC2 VB GND VSS 4400pF -5.2V
VM 50 50
3 Gb/s Laser Diode Driver
Typical DC Characteristics (1) Switching characteristics
F0513005L
(a) Modulation Current Switching
(b) Output Current Switching
Modulation Current IM (mA)
100
Output Current IOUT (mA)
100
VM=-3.9V VM=-4.2V
VM=-3.9V
50
VM=-4.2V VM=-4.5V
50
VM=-4.5V
0 -1.8
-1.3
-0.8
0 -1.8
-1.3
-0.8
Input Voltage VIN1(V) (VB=-5.2V, VAPC1=-2.0V,VAPC2=-0V)
Input Voltage VIN1(V) (VB=-5V, VAPC1=-1.3V,VAPC2=-1.3V)
(a) Modulation Current vs VM
(b) Maximum Bias Current ns VB
Maximum Bias Current IBMAX (mA)
Modulation Current IM (mA)
100
100
50
50
0 -5.5
-4.5
-3.5
0 -5.5
-4.7
-4.2
Control Voltage VM (V) (VB=-5.2V, VAPC1=-2.0V, VAPC2=0V) (VIN1=-1.8V, VIN2=-0.8V)
Control Voltage VB (V) (VM=-5.2V, VAPC1=0V, VAPC2=-2.0V) (VIN1=-0.8V, VIN2=-1.8V)
3 Gb/s Laser Diode Driver
(2) Bias control by APC voltage (a) IBMAX=20mA
50.0 50.0
F0513005L
(b) IBMAX=50mA
VAPC2(V) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
5.0/div
Bias Current IB (mA)
5.0/div
VAPC2(V) -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
Bias Current IB (mA)
0
0.0 -3.0
0.3/div
0.0
0.0 -3.0
0.3/div
0.0
APC Voltage VAPC1 (V) (VM=-5.2V, VB=-5.2V) (VAPC2=-3.0V to 0V, step 0.5V)
APC Voltage VAPC1 (V) (VM=-5.2V, VB=-5.2V) (VAPC2=-3.0V to 0V, step 0.5V)
(3) Dependence on modulation current on the ambient temperature
80
60
IM (mA)
40
20
0 -40
20
0
20
40
60
80
Temperature (C) (VIN1=-1.8V, VIN2=-0.8V) (VB=-5.2V, VAPC1=-2.0V, VAPC2=0V)
3 Gb/s Laser Diode Driver
Typical AC Characteristics
F0513005L
(1) Eye diagrams for pseudo-random data response of electrical output Ta = 25 C, VSS = - 5.2 V, VIN = 0.8 Vp-p, RL = 25 (a) 1 Gb/s NRZ (PRBS 223-1)
20 mV/div
200 psec/div (b) 3 Gb/s NRZ (PRBS 223-1)
20 mV/div
50 psec/div
3 Gb/s Laser Diode Driver
Application Notes (1) Example of circuit block diagram to drive laser diode
Sampling Oscilloscope
F0513005L
O/E Converter 10 OUT1 25 OUT2 VAPC1
Pulse Pattern Generator
VIN1
VIN2
F0513005L VAPC2 VB GND VSS 4400pF -5.2V
VM 50 50
NOTE : The 10 and 25 resistors in series with OUT1 and OUT2 respectively are damping resistors. Their values are selected to minimize ringing caused by the impedance mismatch to the laser diode. These values may change depending upon the type of laser diode used.
(2) Eye diagrams for 2.4 Gb/s NRZ pseudo-random data response of optical output PRBS 223-1, Ta = 25 C, VSS = - 5.2 V, Vin = 0.8 Vp-p, RL = 25
*Laser Diode: Mitsubishi FU-63SDF
3 Gb/s Laser Diode Driver
(3) Example of APC circuit
.027 .027 .027
F0513005L
.027
LD
monitor PD 200 -2.7V +
1.1k *
10k
10k -*
10k -1.5V +
240k -*
-2.4V +
50
50
50
10 13.5k 12.5k 12k 14k -5.2V *LM324 7.5k 18.5k -5.2V -5.2V
DATA
OUT1 OUT2 VIN1 VAPC1 VIN2 VAPC2 -4.4V F0513005L VM VB GND VSS
DATA
-4.4V .027
-1.5V .027 .027
1.6k -5.2V
8.8k
4400p -5.2V
8.8k
1.6k -5.2V
7.5k
18.5k -5.2V
(4) Example of evaluation board
NOTE:
The open circles indicate soldering positions for coaxial cables. Islands A and B are termination resistors bias points. When driven from Picologic, they should be connected to -2 V. Otherwise, they may be connected to ground.
3 Gb/s Laser Diode Driver
F0513005L
General Description Bias current and modulation current are very important electrical characteristics in a laser diode. A center value of the driving current of a laser diode is bias current, which is designed to be presettable ranging from 1 to 50 mA by a controlled voltage of VB terminal according to the threshold current of an employed laser diode and the application. An optical output power is proportional to an amplitude of the driving current of a laser diode called modulation current which can be controlled from 1 to 50 mA by a voltage of VM terminal. Protection against laser thermal runaway is provided by auto power control. VAPC terminal is used to control the bias current setting negative feedback, monitoring the optical output power by PIN photo diode. Positive Temperature Characteristics The most remarkable feature of the F0513005L, which can not be found in other IC's, is the positive temperature characteristics of the modulation current designed to be +0.5 %/C. Emission efficiency in typical laser diodes exhibits negative temperature characteristics; their optical output decreases with increasing ambient temperature. In the case of multiquantum well (MQW) laser diodes, which is the focus of keen interest, the temperature coefficient of -0.5 %/C is reported. The F0513005L can successfully compensate the temperature fluctuation of the optical output power, providing a stable extinction ratio. If a driver circuit does not have a positive temperature characteristic in the modulation current, the bias current increases above the threshold current at higher temperature, resulting in degradation of the extinction ratio. It is not impossible to achieve this kind of compensation by external circuits; it is, however, unrealistic owing to inevitably troublesome tuning. User-friendly Design The F0513005L features a user-friendly design for system designers, permitting a single +5 V power supply operation. A differential ECL compatible input for direct control from ECL or conventional GaAs logic IC's is provided. Two unique auto power controls (VAPC1, VAPC2) permit modulation of the bias current control setting as a mechanism to protect the laser diode against thermal runaway. The APC controls may be modulated at rates up to 100 MHz.
3 Gb/s Laser Diode Driver
Packaging
F0513005L
The F0513005L is in an 18-terminal ceramic LCC package about 300 mil square with the lead pitch of 50 mil, achieving miniaturization and low cost. It is convenient for designers to miniaturize the circuit area in the PCB owing to the leadless package with small dimension. The F0513005M packaged in an 18-lead ceramic MFP about 300 mil square with the lead pitch of 40 mil is also available as another choice for this device, allowing to enhance the flexibility of assembling design. It was originally developed by SEI to improve RF performance and heat radiation. Compared with the LCC, the ground potential is stabler at microwave frequency range and the thermal resistivity is smaller due to the metalbased bottom structure made from CuW (an alloy of copper and tungsten) with a high thermal conductivity. The electrical characteristics of both IC's are almost equal but the system performance depends on the assembling design. The F0513005M is more suitable for application requiring very excellent eye pattern performance and severe thermal stability. Precautions Owing to their small dimensions, the GaAs FET's from which the F0513005L is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment.
3 Gb/s Laser Diode Driver
Package Drawings
F0513005L
6.350.2 0.41 TYP 2.30 TYP
0.60 TYP
0.22-R TYP
0.80 TYP
1.27 TYP
0.97 TYP
Notes: (1) All dimensions in millimeters. (2) Package is made of ceramic. (3) Leads are Ni and Au plated copper. (4) Base metal is copper tungsten.
Electron Device Department
6.350.2

▲Up To Search▲

Price & Availability of F0513005L

	To Download F0513005L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .